E2SWITCH in nature photonics: Lasing in direct-bandgap GeSn alloy grown on Si

We are very happy to announce the recent Nature Photonics publication by the research group around Prof. Siegfried Mantl, E2SWITCH partner from Forschungszentrum J├╝lich, entitled: "Lasing in direct-bandgap GeSn alloy grown on Si".

The article reports on CVD growth of direct band GeSn layers and demonstrates optical pumped lasing in a GeSn strip line. Direct band gap GeSn layers will be also used for Tunnel-FETs in this project.

For the full list of E2SWITCH publications please refer to the Output section of this website.